Researchers Stitch Defects into the World's Thinnest Semiconductor

In pioneering new research at Columbia University, scientists have grown high-quality crystals of molybdenum disulfide (MoS2), the world’s thinnest semiconductor, and studied how these crystals stitch together at the atomic scale to form continuous sheets.

Written byThe Kavli Foundation
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In pioneering new research at Columbia University, scientists have grown high-quality crystals of molybdenum disulfide (MoS2), the world’s thinnest semiconductor, and studied how these crystals stitch together at the atomic scale to form continuous sheets. Through beautiful images of strikingly symmetric stars and triangles hundreds of microns across, they have uncovered key insights into the optical and electronic properties of this new material, which can be either conducting or insulating to form the basic “on-off switch” for all digital electronics. The study is published in the May 5, 2013, issue of Nature Materials.

“Our research is the first to systematically examine what kinds of defects result from these large growths, and to investigate how those defects change its properties,” says James Hone, professor of mechanical engineering at Columbia Engineering, who led the study. “Our results will help develop ways to use this new material in atomically thin electronics that will become integral components of a whole new generation of revolutionary products such as flexible solar cells that conform to the body of a car.”

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