electronics

Electronics giant TDK Corp. and the University of Alabama have signed a two-pronged research agreement to address challenges associated with the growing electric-energy movement and the miniaturization of electronic components.

A quantum mechanical transport phenomenon demonstrated for the first time in synthetic, atomically-thin layered material at room temperature could lead to novel nanoelectronic circuits and devices, according to researchers at Penn State and three other U.S. and international universities.

Researchers have solved the long-standing conundrum of how the boundary between grains of graphene affects heat conductivity in thin films of the miracle substance — bringing developers a step closer to being able to engineer films at a scale useful for cooling microelectronic devices and hundreds of other nano-tech applications.

In 2013 James Hone, Wang Fong-Jen Professor of Mechanical Engineering at Columbia Engineering, and colleagues at Columbia demonstrated that they could dramatically improve the performance of graphene—highly conducting two-dimensional (2D) carbon—by encapsulating it in boron nitride (BN), an insulating material with a similar layered structure. In work published this week in the Advance Online Publication on Nature Nanotechnology’s website, researchers at Columbia Engineering, Harvard, Cornell, University of Minnesota, Yonsei University in Korea, Danish Technical University, and the Japanese National Institute of Materials Science have shown that the performance of another 2D material—molybdenum disulfide (MoS2)—can be similarly improved by BN-encapsulation.














